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AGB3307
50 High Linearity Low Noise Wideband Gain Block
PRELIMINARY DATA SHEET - Rev 1.2
FEATURES
* * * * * * * * DC-5500 MHz Operation Bandwidth +42 dBm Output IP3 at 850 MHz 5 dB Noise Figure at 850 MHz 12 dB Gain at 850 MHz +17.5 dBm P1dB at 1950 MHz SOT-89 Package Single +8 V to +12 V Supply Case Temperature: -40 to +85 C
APPLICATIONS
* * * * Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD systems Fixed Wireless MMDS/WLL WLAN, HyperLAN
S24 Package SOT-89
PRODUCT DESCRIPTION
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise and low distortion. No external matching components are needed for insertion into a 50 system. With a high output IP3, low noise figure and wide band operation, the AGB3307 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3307 requires a single supply voltage, and typically consumes 0.6 Watts of power using a +8 V supply.
RF Input
RF Output / Bias
Figure 1: Block Diagram
07/2003
AGB3307
GND
4
1
RFIN
2
GND
3
RFOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN 1 2 3 4 NAME RFIN GND RFOUT GND DESCRIPTION RF Input Ground RF Output / Bias Ground
2
PRELIMINARY DATA SHEET - Rev 1.2 07/2003
AGB3307
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER Device Voltage (VCC) RF Input Power (PIN) Storage Temperature (TSTG) Junction Temperature MIN 0 -40 MAX +6 +10 +150 +200 UNIT VD C dB m C C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
PARAMETER Operating Frequency (f) (1) Supply Voltage (VSUPPLY) (2) Case Temperature (TC)
MIN -40
TYP +8 -
MAX 5500 +85
UNIT MHz VD C C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) Operating frequency is defined by the output return loss (S22) having a VSWR less than 2:1. (2) Voltage applied through a bias resistor and inductor. Refer to Figure 3. For other supply voltages, see the APPLICATION INFORMATION section.
PRELIMINARY DATA SHEET - Rev 1.2 07/2003
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AGB3307 Table 4: Electrical Specifications (TA = +25 C, VSUPPLY = +8 VDC, 50 System) PARAMETER Gain (S21) 850 1950 2140 2450 Output IP3
(1)
MIN MHz MHz MHz MHz MHz MHz MHz MHz -
TYP 11.9 11.7 11.5 11.5 +41.9 +36.0 +35.6 +33.8 +17.4 5 140 80
MAX -
UNIT
dB
850 1950 2140 2450
dB m
Output 1dB Compression (P1dB) 1950 MHz Noise Figure 850 MHz Thermal Resistance ( JC) (2) Supply Current (ICC)
dB m dB C/W mA
Notes: (1) OIP3 is measured with two tones at 1 MHz spacing at 0 dBm output power per tone. (2) The value for Thermal Resistance is based on a Device Voltage (VCC) of +5.0 Volts. 3. Performance as measured on ANADIGICS test fixture (see Figure 3).
VSUPPLY
38 W Rs Bypass RF Choke 100 nH 0.01 mF 100 pF 10 pF
DC Block RF Input 0.01 mF AGB3307
DC Block
VCC
RF Output 0.01 mF
Figure 3: Application Circuit (50 Terminations)
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PRELIMINARY DATA SHEET - Rev 1.2 07/2003
AGB3307
PERFORMANCE DATA
Figure 4: Gain vs. Frequency De-embedded 50W S-parameter (TA = +25 C, VCC = +5.0 V, ICC = 80 mA)
25
Figure 5: Isolation vs. Frequency De-embedded 50W S-parameter o (TA = +25 C, VCC = +5.0 V, ICC = 80 mA)
0
20
-10
15
Mag S12: Isolation (dB)
0 1 2 3 4 5 6 7
Mag S21: Gain (dB)
-20
10
-30
5
-40
0
-50 0 1 2 3 4 5 6 7
Frequency (GHz)
Frequency (GHz)
0
Figure 6: Input Return Loss vs. Frequency De-embedded 50W S-parameter o (TA = +25 C, VCC = +5.0 V, ICC = 80 mA)
Mag S22: Output Return Loss (dB)
0 1 2 3 4 5 6 7
Figure 7: Output Return Loss vs. Frequency De-embedded 50W S-parameter o (TA = +25 C, VCC = +5.0 V, ICC = 80 mA)
0
Mag S11: Input Return Loss (dB)
-10
-10
-20
-20
-30
-30
-40
-40
-50
-50 0 1 2 3 4 5 6 7
Frequency (GHz)
Frequency (GHz)
PRELIMINARY DATA SHEET - Rev 1.2 07/2003
5
AGB3307
APPLICATION INFORMATION
The AGB3307 is optimized for a bias current of 80 mA. Using a +8 V supply, a bias resistor (RS) of 38 will provide the appropriate bias (see Figure 3). Table 5 shows the recommended value of RS for other supply voltages. Table 5: Bias Resistor Values for Various Supply Voltages
VSUPPLY RS
+8 V 38
+9 V 51
+10 V 63
+12 V 88
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PRELIMINARY DATA SHEET - Rev 1.2 07/2003
AGB3307
PACKAGE OUTLINE
Figure 8: S24 Package Outline - SOT-89
3307 LLLLNN
LLLL= FOUR NUMERIC CHARACTERS
Figure 9: Branding Specification
PRELIMINARY DATA SHEET - Rev 1.2 07/2003
7
AGB3307
ORDERING INFORMATION
PART NUMBER AGB3307S24Q1 TEMPERATURE RANGE -40 to +85C PACKAGE DESCRIPTION SOT-89 Package COMPONENT PACKAGING 1,000 piece Tape and Reel
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
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PRELIMINARY DATA SHEET - Rev 1.2 07/2003

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